| 摘要 |
A fuse box of a semiconductor device is provided to easily perform the fuse blowing by forming a fuse using a second metal line, thereby reducing the depth of a fuse box. A first metal line(69) is formed on a semiconductor substrate(61) having a lower structure. A fuse(75) composed of a second metal line substance is connected to the first metal line. An interlayer dielectric(77), a third metal line and a passivation layer are sequentially formed on the fuse. A fuse box is then formed by etching the passivation layer and the interlayer dielectric on the fuse.
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