| 摘要 |
A semiconductor device and its manufacturing method are provided to prevent boron of a P+ polysilicon gate from outdiffusing into a gate oxide layer and a metal electrode by using an improved boron blocking layer structure. A semiconductor device includes a semiconductor substrate(21), a gate insulating layer, a first blocking layer, a polysilicon gate, a second blocking layer, and a metal electrode. The gate insulating layer(22) is formed on the semiconductor substrate. The first blocking layer(24) is formed on the gate insulating layer. The polysilicon gate is formed on the first blocking layer. The polysilicon gate is doped with P type ions. The second blocking layer(28) is formed on the polysilicon gate. The metal electrode(29) is formed on the second blocking layer.
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