CONTACT MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE

摘要

A method for forming a contact of a semiconductor device is provided to minimize resistance of the device by preventing the loss of tungsten in a contact hole using a barrier metal removing process before a tungsten depositing process. An interlayer dielectric(102) with a contact hole is formed on a semiconductor substrate(101) with a conductive layer. A barrier metal is deposited on the entire surface of the resultant structure and etched until the interlayer dielectric is exposed to the outside. A tungsten film(105) is formed on the resultant structure and etched until the interlayer dielectric is exposed to the outside. Then, metallic conductive layer is formed thereon.