| 摘要 |
A method for forming a fuse box of a semiconductor device is provided to improve the repair efficiency by controlling uniformly the thickness of a remaining oxide layer of a fuse layer. A fuse layer(100) is formed on a substrate, and an insulating layer including a first and a second metal film(103,105) is formed on the fuse layer. A passivation layer(106) is formed on the insulating layer. A fuse box is opened by etching the passivation layer and the insulating layer to expose the fuse layer. An oxide layer(108) having uniform thickness is then formed on the resultant structure. The thickness of the oxide layer is 1500~4000 Š.
|
