| 摘要 |
A method for manufacturing a semiconductor device is provided to prevent misalignment between a recess gate region and a gate electrode, and SAC(Self Align Contact) fail by using an ALD(Atomic Layer Deposition) oxide layer. A photoresist pattern is formed at a contact region of a substrate(100) having an isolation region(110). An ALD oxide layer is formed to fill between the photoresist patterns and planarized to expose the photoresist pattern. By removing the photoresist pattern, an ALD oxide pattern is formed to expose the contact region. A first spacer(140) is formed at both sidewalls of the ALD oxide pattern. C-halo ions are implanted into the contact region of the substrate. A polysilicon layer(160) and an etch stop layer are stacked between the ALD oxide patterns. After the ALD oxide pattern is removed, a recess gate region is formed by etching the exposed substrate. A gate polysilicon layer(190) is filled in the recess gate region. A gate metal film(200) and a hard mask(210) are sequentially stacked on the resultant structure. A second spacer(225) is formed at both sidewalls of the first spacer, the gate metal film and the hard mask.
|
