| 摘要 |
A method for manufacturing a semiconductor device is provided to improve an improved contact hole profile by using a wet etching process and a bowing preventing spacer. An etch stop layer(24) and an insulating layer are sequentially formed on a substrate(21). A hard mask is formed on the insulating layer. A first opening portion is formed on the resultant structure by etching partially the insulating layer using the hard mask as an etch barrier. The first opening portion is expanded. A bowing preventing spacer is formed at sidewalls of the first opening portion. A second opening region(27b) is formed by etching the remaining insulating layer using the bowing preventing spacer and the hard mask as an etch barrier, and a third opening region(27c) is formed under the second opening region by etching the etch stop layer. At this time, the substrate is partially exposed to the outside.
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