METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE USING RECESS GATE PROCESS

摘要

A method for fabricating a semiconductor device through a recess gate process is provided to minimize silicon attack by performing a silicon recess process by using a recess gate oxide film as a barrier. A second insulation film(25a) is formed on a semiconductor substrate(21), and a recess mask is formed on the second insulation film in a line/space shape. The second insulation film is etched by using the recess mask as an etching barrier, and then the recess mask is removed. A recess gate predefining region of the substrate is etched by using the second insulation film as an etch barrier to form a recess pattern(24). A second insulation film is formed on the entire surface of the substrate until gaps of the recess pattern is filled. The second insulation film is left only in the recess pattern. A device isolation predefining region is etched to form a trench(27). The second insulation film is selectively removed, and a device isolation film is formed to bury the trench.