| 摘要 |
A method for forming a storage node of a semiconductor memory device is provided to restrain an upper portion of an insulating layer from being thinned by using an insulating spacer layer with an excellent selectivity rate. A first insulating layer(410) is formed on a semiconductor substrate(400). A conductive contact layer(420) is arranged in the first insulating layer. A second insulating layer(440) is formed on the conductive contact layer. An upper portion of the second insulating layer is recessed and a spacer insulating layer is formed within the recessed portion of the second insulating layer. A storage node contact hole for exposing the spacer insulating layer to the outside is formed on the resultant structure by etching selectively the second insulating layer and the spacer insulating layer.
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