METHOD FOR FABRICATING CMOS IMAGE SENSOR

摘要

A method for manufacturing a CMOS image sensor is provided to reduce dark current by restraining the damage of characteristics of the image sensor due to UV rays using a black matrix layer. An insulating layer is formed on a substrate(30). A black matrix layer(32) is formed on the insulating layer. A photoresist pattern is formed on the black matrix layer. A black matrix pattern is formed on the resultant structure by patterning selectively the black matrix layer using the photoresist pattern as an etch mask. The insulating layer is selectively etched by performing a plasma dry etching process using the photoresist pattern as an etch mask.