发明名称 |
METHOD FOR FABRICATING CMOS IMAGE SENSOR |
摘要 |
A method for manufacturing a CMOS image sensor is provided to improve photo efficiency by obtaining an aiming curvature from a microlens in spite of the decrease of size of a pixel. A plurality of microlens resin layers are formed on a predetermined structure corresponding to each pixel. A pin type rod reaches for each resin layer. A microlens(36) with an aiming curvature is formed by performing a heat treatment on the resultant structure. The pin type rod is made of a silicon oxide layer. The pin type rod reaches a predetermined position adjacent to the resin layer. The predetermined position and the resin layer are spaced apart from as much as 0.1 micrometer.
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申请公布号 |
KR20070003007(A) |
申请公布日期 |
2007.01.05 |
申请号 |
KR20050058726 |
申请日期 |
2005.06.30 |
申请人 |
MAGNACHIP SEMICONDUCTOR, LTD. |
发明人 |
MIN, WOO SIG |
分类号 |
H01L27/146 |
主分类号 |
H01L27/146 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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