发明名称 METHOD FOR FABRICATING CMOS IMAGE SENSOR
摘要 A method for manufacturing a CMOS image sensor is provided to improve photo efficiency by obtaining an aiming curvature from a microlens in spite of the decrease of size of a pixel. A plurality of microlens resin layers are formed on a predetermined structure corresponding to each pixel. A pin type rod reaches for each resin layer. A microlens(36) with an aiming curvature is formed by performing a heat treatment on the resultant structure. The pin type rod is made of a silicon oxide layer. The pin type rod reaches a predetermined position adjacent to the resin layer. The predetermined position and the resin layer are spaced apart from as much as 0.1 micrometer.
申请公布号 KR20070003007(A) 申请公布日期 2007.01.05
申请号 KR20050058726 申请日期 2005.06.30
申请人 MAGNACHIP SEMICONDUCTOR, LTD. 发明人 MIN, WOO SIG
分类号 H01L27/146 主分类号 H01L27/146
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