| 摘要 |
A method for manufacturing a semiconductor device is provided to prevent the generation of leakage current by restraining a storage node contact spacer attack using a buffer insulating layer. A first interlayer dielectric(32) having a contact hole(33) is formed on a semiconductor substrate. A spacer(34) is formed at sidewalls of the contact hole. A contact plug(35) is formed in the contact hole. A buffer insulating layer(36) is formed on the entire surface of the resultant structure. An etch stop layer(37) made of the same material as the spacer is formed on the buffer insulating layer. A second interlayer dielectric(38) is formed on the etch stop layer. A hole(41) for opening an upper portion of the contact plug is formed on the resultant structure by etching selectively the second interlayer dielectric.
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