A MAGNETORESISTANCE DEVICE USING GIANT MAGNETO IMPEDANCE

摘要

An MR(Magnetoresistance) device using giant magneto-impedance is provided to alternatively form a magnetic layer and a diamagnetic layer by using an ion injection method, so as to improve giant magneto-impedance properties by exchange interaction between a ferromagnetic material layer and an antiferromagnetic material layer. A ferromagnetic layer including cobalt, nickel, and iron is formed. Ions are injected into plural particular parts of the ferromagnetic layer to form an antiferromagnetic layer. The ferromagnetic layer and the antiferromagnetic layer are repeatedly formed by turns.