| 摘要 |
<p>A hard mask composition for ultrafine patterning lithographic photoresist is provided to replace conventional two layers of BARC(bottom anti-reflective coating) and SiON(silicon oxynitride) layer, or three layers of BARC, SiON and amorphous carbon in ultrafine patterning process of lithographic photoresist using 193 nm ArF light source. The hard composition comprises: [2-(3,4-epoxycyclohexyl)ethyl]-heptaisobutyl substituted-PSS(polyhedral silsesquioxane) compound having molecular weight of 300 to 30,000 represented by a formula(1) wherein: R1 to R7 are hydrogen, substituted or non-substituted linear or branched C1-C5 alkyl group, substituted non-substituted C3-C8 cycloalkyl group, or substituted or non-substituted C5-C12 aromatic group; and x and y are integer ranging from 1 to 100; another compound having molecular weight of 500 to 50,000 represented by the formula(2); and a hot acid generator. Amount of the compound represented by the formula(1) ranges from 30 to 70wt. parts relative to 100wt. parts of the composition.</p> |
