CARBON NANOTUBE TRANSISTOR WITH SU-8 RESIST COATED IN ELECTRODE

摘要

A carbon nanotube transistor having a deformation electrode is provided to increase the work function of a metal and to effectively induce hole doping by using an SU-8 negative photoresist on an electrode of the carbon nanotube transistor. An alignment marker is formed on a SiO2/Si substrate(10). A pattern of liquid catalyst is manufactured using a PMMA(polymethylmethacrylate) layer on the SiO2/Si substrate that is insulated by a SiO2 layer. The PMMA layer is removed by an acetone solution. A single walled carbon nanotube(14) is grown at CH4 and H2 atmosphere during 10 minutes in a furnace of 900 ‹C. An electrode(12) is formed by performing photolithography and thermal evaporation on the carbon nanotube. The electrode is connected to the carbon nanotube to configure a carbon nanotube transistor and then an SU-8 negative photoresist(16) is coated on the carbon nanotube transistor to form an insulating layer.