| 摘要 |
A method for manufacturing a semiconductor device is provided to obtain stable effective channel region having deep and wide area by using an epitaxial growing layer for forming a recess gate region. A recess gate region(125) is formed in a substrate(100) having an active region(110) and an isolation layer(120). An oxide layer is formed on the recess gate region. An epitaxial growing layer is formed on the active region so as to extend the depth of the recess gate region. The height of the isolation layer is increased as the height of the epitaxial growing layer. After the oxide layer is removed, a gate oxide layer(150) is formed at inner walls of the recess gate region. Then, a gate(180) is formed on the recess gate region.
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