发明名称 |
MONOLITHIC INTEGRATED ENHANCEMENT MODE AND DEPLETION MODE FIELD EFFECT TRANSISTORS AND METHOD OF MAKING THE SAME |
摘要 |
<p>A depletion mode (D-mode) field effect transistor (FET) is monolithically integrated with an enhancement mode (E- mode) FET in a multi-layer structure. The multi-layer structure includes a channel layer overlaid by a barrier layer overlaid by an ohmic contact layer. Source and drain contacts of the D-mode and E-mode FETs are coupled to the ohmic contact layer. A gate contact of the D-mode and E- mode FETs is coupled to the barrier layer. An amorphized region is provided beneath the E-mode gate contact within the barrier layer. The amorphized region forms a buried E-mode Schottky contact with the barrier layer. An alternative embodiment couples the gate contact of the D-mode transistor to a first layer that overlies the barrier layer, and provides a similar D-mode amorphized region within the first layer. ® KIPO & WIPO 2007</p> |
申请公布号 |
KR20070003803(A) |
申请公布日期 |
2007.01.05 |
申请号 |
KR20067012710 |
申请日期 |
2006.06.23 |
申请人 |
TRIQUINT SEMICONDUCTOR, INC. |
发明人 |
WOHLMUTH WALTER A. |
分类号 |
H01L29/78;H01L21/70;H01L21/8234;H01L21/8252;H01L27/06;H01L27/088 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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