IMMERSION LITHOGRAPHY EDEGE BEAD REMOVAL

摘要

An immersion lithography edge bead removing method and a system therefor are provided to reduce the contamination of an immersion exposure fluid and a lens and to minimize defects of a wafer. A photosensitive layer is formed on a semiconductor wafer in order to perform an immersion lithography process(102). An edge bead removal process is performed by spraying a first liquid onto a front edge portion of the wafer(104). A spin drying process is performed on the wafer. A baking process is performed thereon. An exposing process is performed on the photosensitive layer. A post-exposure baking process is performed on the resultant structure. Then, a developing process is performed on the photosensitive layer.