| 摘要 |
<p>A method for forming a chromeless phase shift mask is provided to form a photoresist pattern with an aiming size on a semiconductor substrate by obtaining a vertical etched surface and a flat bottom from a phase shift region using multi-step etching processes under a CHF3 gas condition and exhausting processes. A photoresist pattern is formed on a quartz substrate. Multi-step etching processes performed on the resultant structure by using the photoresist pattern as an etch mask under a CHF3 gas condition. Exhausting gas is removed from the ambient of the resultant structure. A trench type phase shift region is formed on the resultant structure by performing the etching and exhausting processes at least two or more times.</p> |
