| 摘要 |
<p>A method for manufacturing a NAND flash memory device is provided to prevent program disturb by forming a spacer at inner walls of a trench. A tunnel oxide layer(102) and a first polysilicon layer(104) are formed on a substrate(100) of an active region defined by an isolation layer(106). After a second polysilicon layer(108) is deposited on the resultant structure, a trench(110) is formed by etching the second polysilicon layer and the isolation layer. A spacer(112) is formed at inner walls of the trench. After a dielectric film is formed on the resultant structure, a third polysilicon layer and a tungsten silicide layer are sequentially formed to fill the trench.</p> |
