| 摘要 |
A method for forming a recess gate in a semiconductor device is provided to prevent misalignment between a groove and a gate, and leaning of the gate by forming the groove and the gate using a single recess mask. A semiconductor substrate(11) having an isolation layer(12) for defining an active region is prepared. A recess mask is formed on the substrate to define a gate region. A groove(16) is formed by etching the substrate using the recess mask. A gate oxide layer(17) is formed on the groove. A gate substance is then filled in the groove. By removing the recess mask, a recess gate(21) is formed.
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