发明名称 |
Method for fabricating semiconductor device with deep opening |
摘要 |
A method for fabricating a semiconductor device with a deep opening is provided. The method includes: forming an insulation layer on a substrate; selectively etching the insulation layer to form first openings; enlarging areas of the first openings; forming anti-bowing spacers on sidewalls of the enlarged first openings; and etching portions of the insulation layer remaining beneath the enlarged first openings to form second openings.
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申请公布号 |
US2007004194(A1) |
申请公布日期 |
2007.01.04 |
申请号 |
US20050321593 |
申请日期 |
2005.12.30 |
申请人 |
CHO YONG-TAE;LEE HAE-JUNG;CHO SANG-HOON |
发明人 |
CHO YONG-TAE;LEE HAE-JUNG;CHO SANG-HOON |
分类号 |
H01L21/4763 |
主分类号 |
H01L21/4763 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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