发明名称 NOR flash memory device with multi level cell and read method thereof
摘要 A NOR flash memory device includes a multi level memory cell coupled to a bit line configured to be sensed in response to a word line voltage, and a discharge circuit configured to discharge the bit line when the multi level memory cell is sensed as an on cell.
申请公布号 US2007002628(A1) 申请公布日期 2007.01.04
申请号 US20050322910 申请日期 2005.12.29
申请人 KIM BO-GEUN;LIM HEUNG-SOO;LIM JAE-WOO 发明人 KIM BO-GEUN;LIM HEUNG-SOO;LIM JAE-WOO
分类号 G11C16/04 主分类号 G11C16/04
代理机构 代理人
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