发明名称 |
NOR flash memory device with multi level cell and read method thereof |
摘要 |
A NOR flash memory device includes a multi level memory cell coupled to a bit line configured to be sensed in response to a word line voltage, and a discharge circuit configured to discharge the bit line when the multi level memory cell is sensed as an on cell.
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申请公布号 |
US2007002628(A1) |
申请公布日期 |
2007.01.04 |
申请号 |
US20050322910 |
申请日期 |
2005.12.29 |
申请人 |
KIM BO-GEUN;LIM HEUNG-SOO;LIM JAE-WOO |
发明人 |
KIM BO-GEUN;LIM HEUNG-SOO;LIM JAE-WOO |
分类号 |
G11C16/04 |
主分类号 |
G11C16/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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