Semiconductor device e.g., dynamic random access memory device, includes silicon oxide spacers on sides of conductor structures, and silicon nitride spacers on partially exposed upper side portions of conductor structures

摘要

A semiconductor device includes silicon oxide spacers formed on sides of two-spaced apart conductor structures formed on a substrate. The top surface of the silicon oxide spacers is lower than that of the silicon nitride mask layer. The resulting partially exposed upper side portions of the conductor structures are formed with silicon nitride spacers. A semiconductor device comprises two-spaced apart conductor structures (105) formed on a semiconductor substrate (100). Each conductor structure has first conductive layer (102) and silicon nitride mask layer (104). Silicon oxide spacers (106) are formed on sides of each conductor structure. The top surface (106a) of the silicon oxide spacers is lower than that of the silicon nitride mask layer, thus partially exposing upper side portions of the conductor structures. Silicon nitride spacers (108) are formed on exposed upper side portions (104b) of each conductor structure and surface of silicon oxide spacers. An insulating layer (110), which is formed on the conductor structures, has self-aligned contact hole (112) exposing the silicon nitride spacers between the spaced apart conductor structures. The self-aligned contact hole is filled up with a second conductive layer (114). An independent claim is also included for a method of manufacturing a semiconductor device comprising forming two spaced-apart conductor structures on semiconductor substrate. Silicon oxide spacers are formed on each conductor structure, and silicon nitride spacers are formed on exposed upper side portions of each conductor structure and surface of silicon oxide spacers. A silicon oxide insulating layer is formed on the conductor structures and substrate. The insulating layer is partially etched to form a self-aligned contact hole exposing the silicon nitride spacers between the spaced apart conductors. The self-aligned contact hole is filled with a second conductive layer to form a self-aligned contact structure.