发明名称 METHOD FOR PRODUCING SPUTTERING TARGET
摘要 A sputtering target production method that can prolong life of a sputtering target and can obtain a high density sputtering target is provided. In a method for producing a sputtering target by mixing and firing raw materials including indium oxide powder and tin oxide powder, the method comprises calcining at least indium oxide powder at a calcination temperature of 1,100 to 1,300 deg.C to prepare a mixed powder from raw materials; and firing the mixed powder at a temperature that is 150 deg.C or more higher than the calcination temperature. The calcined indium oxide powder contains 50 ppm or less of carbon. The indium oxide powder is calcined such that the indium oxide powder has a BET specific surface area of 0.8 to 4 m^2/g. The mixed powder is treated to avoid a contact between the raw materials and carbon dioxide during the calcination of the indium oxide powder, and until the mixed powder is fired after calcining the indium oxide powder.
申请公布号 KR20070001811(A) 申请公布日期 2007.01.04
申请号 KR20060058442 申请日期 2006.06.28
申请人 MITSUI MINING & SMELTING CO., LTD. 发明人 TAKAHASHI SEIICHIRO;WATANABE HIROSHI
分类号 C22B1/16;C23C14/34 主分类号 C22B1/16
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