| 摘要 |
The invention concerns a solar cell (10) comprising photoactive semiconductor layers (18) extending between a front contact and a rear contact (12, 14), and an integrated protecting diode (20) having a polarity opposite to that of the solar cell, and which comprises a p-type conductivity semiconductor layer (26) extending on the front side. The invention is characterized in that said protecting diode is contacted with a metal plate (28) which is connected to the front contact (14). To ensure high stability of the protecting diode, in particular to prevent migration of metal atoms, an n-type conductivity layer (30) is arranged on the p-type conductivity semiconductor layer (26) of the protecting diode (20), and surrounds the metal plate (28) in frame-like manner. |
