发明名称 Input power protected ratiometric output sensor circuit
摘要 MOSFETs are provided to connect the sensor input terminals of a ratiometric output sensor to a pair of power terminals, and the gate of each MOSFET is coupled to the opposite power terminal so that both MOSFETs are rendered conducting to power the sensor when a supply voltage of a predetermined polarity is connected across the power terminals but one of the MOSFETs is rendered non-conducting when a voltage of the opposite polarity is so applied. The MOSFET that is rendered non-conducting is oriented so that any internal source-drain diode does not bypass current around the MOSFET when voltage of the opposite polarity is applied. Optionally, over-voltage protection is provided by an input voltage sensor controlling the other MOSFET through a third MOSFET.
申请公布号 US2007001255(A1) 申请公布日期 2007.01.04
申请号 US20060472802 申请日期 2006.06.22
申请人 LIN YINGJIE 发明人 LIN YINGJIE
分类号 H01L31/058 主分类号 H01L31/058
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