发明名称 |
Memory cell comprising one MOS transistor with an isolated body having a prolonged memory effect |
摘要 |
A memory cell with one MOS transistor formed in a floating body region in which the lower surface of the source and drain regions, outside of the source extension and drain extension regions, rests on an insulating layer.
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申请公布号 |
US2007001165(A1) |
申请公布日期 |
2007.01.04 |
申请号 |
US20060479220 |
申请日期 |
2006.06.30 |
申请人 |
STMICROELECTRONICS CROLLES 2 SAS |
发明人 |
RANICA ROSSELLA;VILLARET ALEXANDRE;MAZOYER PASCALE |
分类号 |
H01L31/00 |
主分类号 |
H01L31/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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