LAYER GROWTH USING METAL FILM AND/OR ISLANDS

摘要

A solution for manufacturing a nitride-based heterostructure, semiconductor; device, or the like, by growing one or more layers using a metal film and/or nitride islands is provided. In an embodiment of the invention, a group-Ill nitride film is grown on a surface of a lower layer. The nitride film is grown by first epitaxially growing a group-Ill metal film on the surface in a substantially nitrogen-free atmosphere. The group-Ill metal film is grown such that it covers substantially an entire area of the surface. Next, the group-Ill metal film is nitridated to form a group-Ill nitride film. This process can be repeated one or more times to form the layer. In another embodiment of the invention, islands are formed on a surface of a lower layer from a group-Ill nitride film. The islands can be used to subsequent group-Ill nitride growth to form the group-Ill nitride layer. The invention provides an improved solution for growing a layer that can be used to generate heterostructures/semiconductors/devices having improved characteristics.