| 摘要 |
<p>A dielectric of a nonvolatile memory device and its fabricating method are provided to improve coupling ratio and leakage current characteristics by employing an oxide-high-k dielectric-oxide structure in the dielectric. A dielectric(16) comprises a first oxide layer(16a), a first high-k dielectric(16b), a second oxide layer(16c), a second high-k dielectric, and a third oxide layer. The first high-k dielectric is formed on an upper portion of the oxide layer. The first high-k dielectric is comprised of one selected among materials whose dielectric constant is at least 9 or a mixture of at least two kinds of materials of the materials. The second oxide layer is formed on an upper portion of the first high-k dielectric. The second high-k dielectric is made of the same material as the first high-k dielectric. The second high-k dielectric is formed on an upper portion of the second oxide layer. The third oxide layer is formed on an upper portion of the second high-k dielectric.</p> |
