| 摘要 |
A vacuum-processing method carries out, in a vacuum-processing vessel ( 4 ), a process wherein a condition of an interior of the vacuum processing vessel ( 4 ) changes as the number of processed objects (W) increases, such as a film-forming process for forming a thin film on a semiconductor wafer (W) by using a process gas in the vacuum processing vessel ( 4 ). The vacuum-processing method controls a controlled parameter directly affecting an effect of the process, such as film thickness, so that the controlled parameter is maintained at a target value (r<SUB>t</SUB>). The vacuum-processing method determines a model function obeying a change of the condition of the interior of the processing vessel ( 4 ), and calculates the target value (r<SUB>t</SUB>) of the controlled parameter every time one or a plurality of objects (W) are processed on the basis of a set value (D<SUB>t</SUB>) of a set parameter representing the effect of the process, and the model function. |
