| 摘要 |
A method of manufacturing an image sensor is provided to improve charge transfer efficiency by removing an electric potential barrier between a photodiode and a channel, thereby improving a performance of the image sensor. A transfer gate(Tx) is formed on a fir conductive semiconductor layer, and a photodiode(PD) is formed in one side of the transfer gate which is aligned with the transfer gate. A second conductive impurity which is identical to a depletion region of the photodiode is implanted between the photodiode and the transfer gate to form an impurity region for interrupting an electric potential barrier. A spacer(26) is formed on both sides of the transfer gate. The second conductive impurity is implanted in the other side of the transfer gate to form a sensing diffusion region(28).
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