发明名称 |
Schottky diode with minimal vertical current flow |
摘要 |
A method of forming a rectifying diode. The method comprises providing a first semiconductor region of a first conductivity type and having a first dopant concentration and forming a second semiconductor region in the first semiconductor region. The second semiconductor region has the first conductivity type and having a second dopant concentration greater than the first dopant concentration. The method also comprises forming a conductive contact to the first semiconductor region and forming a conductive contact to the second semiconductor region. The rectifying diode comprises a current path, and the path comprises: (i) the conductive contact to the first semiconductor region; (ii) the first semiconductor region; (iii) the second semiconductor region; and (iv) the conductive contact to the second semiconductor region. The second semiconductor region does not extend to a layer buried relative to the first semiconductor region.
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申请公布号 |
US2007001193(A1) |
申请公布日期 |
2007.01.04 |
申请号 |
US20050174190 |
申请日期 |
2005.07.01 |
申请人 |
TEXAS INSTRUMENTS INCORPORATED |
发明人 |
DROBNY VLADIMIR F.;ROBINSON DEREK W. |
分类号 |
H01L29/74 |
主分类号 |
H01L29/74 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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