发明名称 |
ANTI-PUNCH-THROUGH SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF |
摘要 |
An anti-punch-through semiconductor device is provided. The anti-punch-through semiconductor device includes a substrate, at least an isolation region and a plurality of trench devices. The trench device is disposed in the substrate. The trench device includes a source/drain region. The source/drain region of the trench device is disposed at the bottom of the trench device. The isolation region is disposed in the substrate and between the source/drain regions of each trench device.
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申请公布号 |
US2007001257(A1) |
申请公布日期 |
2007.01.04 |
申请号 |
US20050164825 |
申请日期 |
2005.12.07 |
申请人 |
LAI LIANG-CHUAN;WANG PIN-YAO |
发明人 |
LAI LIANG-CHUAN;WANG PIN-YAO |
分类号 |
H01L29/00 |
主分类号 |
H01L29/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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