发明名称 MOSFET temperature sensing
摘要 A MOSFET has its gate voltage controlled to provide a constant drain current of the MOSFET, for example to limit inrush current for charging a capacitance of a power supply arrangement. A decrease in the gate voltage supplied to the MOSFET, corresponding to an increase in the junction temperature of the MOSFET, by more than a determined amount is detected and used to reduce the gate voltage, and hence the drain current, for example to zero, to prevent heating of the MOSFET beyond a maximum operating temperature.
申请公布号 US2007004054(A1) 申请公布日期 2007.01.04
申请号 US20050169637 申请日期 2005.06.30
申请人 POTENTIA SEMICONDUCTOR INC. 发明人 ORR RAYMOND K.
分类号 H01L21/00;H01L21/66 主分类号 H01L21/00
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