发明名称 METHOD FOR FABRICATING METAL LINE AND THIN FILM TRANSISTOR PLATE AND THIN FILM TRANSISTOR PLATE FABRICATED BY THE SAME
摘要 A method for forming metal lines, a method for manufacturing a thin film transistor substrate, and a thin film transistor substrate manufactured by the same are provided to prevent lines from being delaminated or peeled by improving adhesion between gate lines and a substrate even in case that the lines are formed by using silver which is a low-resistance conductive material, by interposing an organic film having high surface roughness, thereby improving a signal characteristic of a liquid crystal display. An adhesion improver is applied on a substrate and an organic film is formed on the substrate(S1). Surface roughness of the organic film is increased through plasma etching or chemical etching(S2). Conductive patterns including metal conductive patterns and transparent conductive patterns are formed on the organic film(S3).
申请公布号 KR20070001704(A) 申请公布日期 2007.01.04
申请号 KR20050057322 申请日期 2005.06.29
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 KIM, KYU YOUNG
分类号 G02F1/136 主分类号 G02F1/136
代理机构 代理人
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