| 摘要 |
A method for fabricating a semiconductor device is provided to restrain gate depletion by ion-implanting p-type impurity into a metal silicide layer in a PMOS forming region. A silicon substrate(21) having a P-well(23a) and a N-well(23b) is provided. A gate oxide layer(24) is formed on the silicon substrate. A non-doped poly silicon layer(26) is formed on the gate oxide layer. N-type impurity is selectively ion-implanted into the non-doped poly silicon layer part formed on the P-well. A metal silicide layer(28) is formed on the poly silicon layer where the n-type impurity is selectively ion-implanted. P-type impurity is ion-implanted into the metal silicide layer part formed on the N-well and the non-doped poly silicon layer part. The metal silicide layer, the poly silicon layer, and the gate oxide layer are etched in turn.
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