A non- volatile memory cell includes a volatile storage device that stores a corresponding logic state in response to electrical stimulus; and a shadow memory device coupled to the volatile storage device. The shadow memory devi ce receives and stores the corresponding logic state in response to electrical stimulus. The shadow memory device includes a non- volatile nanotube switch that stores the corresponding state of the shadow device.
申请公布号
CA2608065(A1)
申请公布日期
2007.01.04
申请号
CA20062608065
申请日期
2006.05.09
申请人
NANTERO, INC.
发明人
RUECKES, THOMAS;BERTIN, CLAUDE L.;GUO, FRANK;STRASBURG, MAX;HUANG, X. M. HENRY;SIVARAJAN, RAMESH;MEINHOLD, MITCHELL;KONSEK, STEVEN L.