| 摘要 |
A dry etching method comprises: exposing an etching region of a workpiece to a plasma product of a depositive gas, the depositive gas having a CF group in a reaction chamber; exposing the etching region to a plasma product of an etching gas in the reaction chamber; exposing the etching region to a plasma product of the depositive gas in the reaction chamber; and exposing the etching region to a plasma product of the etching gas in the reaction chamber. Alternatively, a dry etching method comprises: exposing an etching region of a workpiece to a plasma product of a depositive gas, the depositive gas containing a fluorocarbon-based gas and at least one of CO (carbon monoxide) gas, hydrogen gas, and CH<SUB>4 </SUB>gas in a reaction chamber; exposing the etching region to a plasma product of an etching gas in the reaction chamber; exposing the etching region to a plasma product of the depositive gas in the reaction chamber; and exposing the etching region to a plasma product of the etching gas in the reaction chamber.
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