发明名称 |
Post polish anneal of atomic layer deposition barrier layers |
摘要 |
A method for forming a semiconductor device is disclosed wherein atomic layer deposition (ALD) precursor species and/or by-product absorbed by an ILD are outgassed and/or neutralized prior to subsequently patterning the semiconductor device, thereby improving the ability to accurately define subsequently formed interconnect structures in the ILD.
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申请公布号 |
US2007004230(A1) |
申请公布日期 |
2007.01.04 |
申请号 |
US20050173858 |
申请日期 |
2005.06.30 |
申请人 |
JOHNSTON STEVEN W;O'BRIEN KEVIN P;BALAKRISHNAN SRIDHAR |
发明人 |
JOHNSTON STEVEN W.;O'BRIEN KEVIN P.;BALAKRISHNAN SRIDHAR |
分类号 |
H01L21/31;H01L21/469 |
主分类号 |
H01L21/31 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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