| 摘要 |
A thin film transistor substrate and a method for manufacturing the same are provided to simplify a process by consecutively depositing a gate insulator film, a semiconductor layer, an ohmic contact layer, and a barrier layer by PECVD(Plasma Enhanced Chemical Vapor Deposition) when forming thin film transistors, thereby reducing the manufacturing cost of the thin film transistor substrate. Gate lines(22) have gate electrodes(26) on an insulation substrate. A gate insulator film is formed on the gate lines. An active layer and an ohmic contact layer are formed on the gate insulator film in order. Data lines(72) are formed on the ohmic contact layer, having source and drain electrodes(75,76). A passivation film is formed on the accumulated matters. Pixel electrodes(92) are electrically connected with the drain electrodes through contact holes(84) formed at the passivation film. Barrier patterns are formed between the ohmic contact layer and the data lines, having the same shape as the data lines except the source and drain electrodes, the ohmic contact layer, and the active layer. |
