| 摘要 |
A method for fabricating a metal contact of a semiconductor device is provided to prevent block fail between a metal wire and the metal contact by employing a simplified process for fabricating the metal contact. A lower metal wire(102) is formed on a semiconductor substrate(100) on which a predetermined lower structure is formed. An anti-reflection layer comprised of a titanium/titanium nitride layer is formed on the lower metal wire. An interlayer dielectric(104) is formed on the anti-reflection layer. A contact hole(106) is formed on the interlayer dielectric to expose a predetermined portion of the anti-reflection layer. An aluminium plug(109) is gap-filled in the contact hole by CVD(Chemical Vapor Deposition). An upper metal wire(112) is formed on the interlayer dielectric to be connected to the aluminium plug.
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