发明名称 Semiconductor memory device
摘要 An equalizing circuit connects a pair of bit lines to each other in response to the activation of an equalizing control signal and connects the pair of bit lines to a precharge voltage line. An equalizing control circuit deactivates the equalizing control signal in response to the activation of a first timing signal. A word line driving circuit activates one of word lines in response to the activation of a second timing signal. A first signal generating circuit of a timing control circuit generates the first timing signal. A second signal generating circuit of the timing control circuit activates the second timing signal after the deactivation of the equalizing control signal accompanying the activation of the first timing signal. A delay control circuit of the second signal generating circuit delays an activation timing of the second timing signal in a test mode from that in a normal mode.
申请公布号 US2007002648(A1) 申请公布日期 2007.01.04
申请号 US20050260200 申请日期 2005.10.28
申请人 FUJITSU LIMITED 发明人 IKEDA HITOSHI;MORI KAORU;OKUYAMA YOSHIAKI
分类号 G11C29/00 主分类号 G11C29/00
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