| 摘要 |
<p>The present invention relates to a semiconductor light emitting device and a method of manufacturing the semiconductor light emitting device. In the semiconductor light emitting device manufacturing method of the present invention, a surface of a substrate (300), on which the semiconductor light emitting device is to be manufactured, is etched, thus forming a plurality of deep trenches (320, 321 and 322) . A plurality of semiconductor films is sequentially grown on the surface of the substrate in which the deep trenches are formed. The deep trenches are formed to have predetermined depth, so that, even if the semiconductor films are grown on the surface of the substrate, a plurality of voids (350, 351 and 352) is formed in regions of the substrate in which the trenches are formed, and the voids are used as reflectors for light generated by the semiconductor light emitting device.</p> |
