摘要 |
A method for arranging a storage node contact and a storage node of a semiconductor device and a semiconductor device employing the same are provided to secure a process margin and a design margin by overlapping parts of the storage node contact and the storage node. A storage node contact(330) has an oval shape. A major axis of the storage node contact lies on a vertical direction and a minor axis thereof lies on a transverse direction. A storage node has an oval shape. A major axis of the storage node lies on a transverse direction and a minor axis thereof lies on a vertical direction. Parts of the storage node contact and the storage node are overlapped with each other. Therefore, a process margin and a design margin are secured.
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