CMOS IMAGE SENSOR, AND METHOD FOR FABRICATING THE SAME

摘要

A CMOS image sensor and its manufacturing method are provided to improve quantum efficiency and optical sensing efficiency by gap-filling a material of a direct transition characteristics in a trench formed at an optical sensing region. A semiconductor substrate(201) is provided with a trench which is formed at a region where a photo diode is to be formed. A depth of the trench is 2.0 micro meters. A material layer(204) of a direct transition characteristics is gap-filled in the trench. Impurity regions of the photo diode are formed in the material layer. The material layer is hydrogenated amorphous silicon.