| 摘要 |
This method for manufacturing a semiconductor substrate is characterized in that the method includes: a step of ion-implanting light element to a predetermined depth position in a single-crystal wafer of which a surface is a cleavage plane; and a step of heat-treating the single-crystal wafer so as to form light-element bubbles along a cleavage plane parallel to the surface of the single-crystal wafer within an ion-implanted region and thereby splitting off a portion of the single-crystal wafer on an ion-implanted side.
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