发明名称 |
STRUCTURE AND METHOD FOR FORMING LATERALLY EXTENDING DIELECTRIC LAYER IN A TRENCH-GATE FET |
摘要 |
<p>A field effect transistor (FET) is formed as follows. A trench is formed in a silicon region. An oxidation barrier layer is formed over a surface of the silicon region adjacent the trench and along the trench sidewalls and bottom. A protective layer is formed over the oxidation barrier layer inside and outside the trench. The protective layer is partially removed such that a portion of the oxidation barrier layer extending at least along the trench bottom becomes exposed and portions of the oxidation barrier layer extending over the surface of the silicon region adjacent the trench remain covered by remaining portions of the protective layer.</p> |
申请公布号 |
WO2007001988(A2) |
申请公布日期 |
2007.01.04 |
申请号 |
WO2006US23819 |
申请日期 |
2006.06.19 |
申请人 |
FAIRCHILD SEMICONDUCTOR CORPORATION;ANDREWS, JOHN, TRACEY |
发明人 |
ANDREWS, JOHN, TRACEY |
分类号 |
H01L29/78;H01L21/336;H01L23/58 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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