发明名称 CHEMICAL DIE SINGULATION TECHNIQUE
摘要 <p>A method is provided for manufacturing a semiconductor device from a substrate (200) having an active surface (204) and a non-active surface (206). The method comprises depositing a backing material (104) onto the non-active surface of the substrate (206) in a pattern (500), the pattern (500) having at least a first die section (210), a second die section (212) adjacent the first die section (210), and a strip (216) connecting the first die section (210) and the second die section (212), removing material from portions of the non-active surface of the substrate (206) on which the backing material (104) is not deposited to thereby partially separate the substrate (200) into a first die (236) and a second die (238) connected to one another by the strip (254) of the deposited backing material, and breaking the strip connector (254) to separate the first die (236) from the second die (238).</p>
申请公布号 WO2007001854(A2) 申请公布日期 2007.01.04
申请号 WO2006US23120 申请日期 2006.06.13
申请人 FREESCALE SEMICONDUCTOR, INC.;CONDIE, BRIAN W.;DOUGHERTY, DAVID J.;SHAH, MAHESH K. 发明人 CONDIE, BRIAN W.;DOUGHERTY, DAVID J.;SHAH, MAHESH K.
分类号 H01L21/00 主分类号 H01L21/00
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