| 摘要 |
<p>There is provided a semiconductor device including bit lines (14) formed in a semiconductor substrate (10), an insulation film line (18) continuously arranged on the bit lines (14) in the longitudinal direction of the bit line (14), a gate electrode (16) arranged between bit lines (14) on the semiconductor substrate (10), a word line (20) arranged on the gate electrode (16) and extending in the width direction of the bit lines (14), and a trench portion (22) formed between the bit lines (14) and the word lines (20) on the semiconductor substrate. A method for fabricating the semiconductor device is also disclosed. It is possible to provide a semiconductor device and a fabrication method thereof capable of separating elements between the word lines (14) and making a fine memory cell.</p> |
