| 摘要 |
<p>A method for forming a storage node contact of a semiconductor device is provided to obtain an aiming size from the storage node contact by using a conventional KrF dipole illumination. An interlayer dielectric and a hard mask nitride layer are formed on a semiconductor substrate with an MOS(Metal Oxide Semiconductor) transistor. A first photoresist pattern is formed on the hard mask nitride layer by using a KrF dipole y illumination system. The first photoresist pattern has a small line with a width range of 70 to 80 nm. The hard mask nitride layer is selectively etched by using the first photoresist pattern as an etch mask. The first photoresist pattern is removed therefrom. A second photoresist pattern(440) is formed on the resultant structure by using a KrF dipole x illumination system. The second photoresist pattern is arranged in an X direction. The interlayer dielectric is selectively etched by using the second photoresist pattern as an etch mask.</p> |
